RTQ020N05
l Electrical characteristic curves
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Data Sheet
1000
V GS = 2.5V
Pulsed
1000
100
C iss
100
T a =125oC
T a =75oC
T a =25oC
T a = - 25oC
10
C rss
C oss
10
0.1
1
10
1
0.01
0.1
1
T a = 25oC
f = 1MHz
V GS = 0V
10 100
Drain Current : I D [A]
Fig.19 Switching Characteristics
1000
Drain - Source Voltage : V DS [V]
Fig.20 Dynamic Input Characteristics
5
100
t d(off)
t f
T a =25oC
V DD = 25V
V GS = 4.5V
R G =10 W
Pulsed
4
3
2
10
t r
t d(on)
1
T a =25oC
V DD = 25V
I D = 2.0A
R G =10 W
Pulsed
1
0.01
0.1
1
10
0
0
0.5
1
1.5
2
2.5
3
Drain Current : I D [A]
Total Gate Charge : Q g [nC]
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.10 - Rev.B
相关PDF资料
RTQ035N03TR MOSFET N-CH 30V 3.5A TSMT6
RTQ045N03TR MOSFET N-CH 30V 4.5A TSMT6
RTR020N05TL MOSFET N-CH 45V 2A TSMT3
RTR025N03TL MOSFET N-CH 30V 2.5A TSMT3
RTR025N05TL MOSFET N-CH 45V 2.5A TSMT3
RTR030N05TL MOSFET N-CH 45V 3A TSMT3
RTU002P02T106 MOSFET P-CH 20V 250MA SOT-323
RUE002N02TL MOSFET N-CH 20V .2A EMT3
相关代理商/技术参数
RTQ025P02 制造商:ROHM 制造商全称:Rohm 功能描述:DC-DC Converter (−20V, −2.5A)
RTQ025P02TR 功能描述:MOSFET P-CH 20V 2.5A TSMT6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RTQ030P02 制造商:ROHM 制造商全称:Rohm 功能描述:DC-DC Converter (−20V, −3.0A)
RTQ030P02TR 功能描述:MOSFET P-CH 20V 3A TSMT6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RTQ035N03 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch MOS FET
RTQ035N03TR 功能描述:MOSFET N-CH 30V 3.5A TSMT6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RTQ035P02 制造商:ROHM 制造商全称:Rohm 功能描述:DC-DC Converter (−20V, −3.5A)
RTQ035P02TR 功能描述:MOSFET P-CH 20V 3.5A TSMT6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube